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BAS85 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BAS85
Giải thích chi tiết về linh kiện  Schottky barrier diode
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BAS85 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

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BAS85
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 10 September 2010
2 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
2.
Pinning information
[1]
The marking band indicates the cathode.
3.
Ordering information
4.
Marking
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
cathode
[1]
2
anode
ka
sym001
12
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BAS85
-
hermetically sealed glass surface-mounted package;
2 connectors
SOD80C
Table 4.
Marking codes
Type number
Marking code
BAS85
marking band
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF
forward current
-
200
mA
IF(AV)
average forward current
[1] -200
mA
IFRM
repetitive peak forward
current
tp ≤ 1s; δ≤ 0.5
-
300
mA
IFSM
non-repetitive peak
forward current
tp =10 ms
-
5
A
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
−65
+125
°C
Tstg
storage temperature
−65
+150
°C



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