2

Symbol

Parameter

Units

Absolute Max.

Vdd, VddBias

Supply voltages, bias supply voltage

V

6

Vc

Control Voltage

V

(Vdd)

CW RF Input Power

dBm

20

W

5.3

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any

of these limits may cause permanent

damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique.

74.7

°C derate the device power at 70.4

mW per °C rise in Board (package belly)

temperature.

Electrical Specifications

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Vdd

Supply Voltage

V

5.0

Idq_total

Quiescent Supply Current

mA

340

Gain

Gain

dB

35

40

OP1dB

Output Power at 1dB Gain Compression

dBm

35

LTE 20 MHz 100 RB Test Mode 1.1 downlink signal

dBc

-48

-45

PAE

Power Added Efficiency

%

13

S11

Input Return Loss, 50

Ω source

dB

20

DetR

Detector RF dynamic range

dB

20

2fo

2fo Harmonics

dBc

-27

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

33 35 37 39 41 43 45 47 49

0.4

0.5

0.6

0.7

0.8

0.9

6 7 8 9 10 11.5 13 14.5 16

-50.5

-49 -48 -47 -46 -45 -44

17.5 19

Note:

4. Distribution data sample size is 1500 samples taken from 3 different wafer lots. TA=25°C, Vdd=VddBias=5.0V, Vc1=2.0V, Vc2=1.8V, Vc3=1.8V, RF

performance at 2.35 GHz unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the upper

and lower limits.

Figure 1. Idq_total, Nominal = 340mA

Figure 2. Idd_total at Pout=27.0dBm, Nominal = 700mA

Figure 3. Gain at Pout=27.0dBm, LSL= 35dB, Nominal = 40dB

Figure 4. PAE at Pout=27.0dBm, Nominal = 13%

Figure 5. ACPR1 at Pout=27.0dBm, USL= -45dBc, Nominal = -47.7dBc