2

Symbol

Parameter

Units

Absolute Max.

Supply voltages, bias supply voltage

V

5.5

Control voltage

V

CW RF Input Power

dBm

20

W

6.0

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any

of these limits may cause permanent

damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique.

> 72

°C derate the device power at 77

mW per °C rise in board (package belly)

temperature.

Electrical Specifications

Bandwidth, MCS 7, 800 ns Guard Interval, unless otherwise stated.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Supply Voltage

V

5.0

Quiescent Supply Current

mA

250

480

650

Total Supply Current at linear output 21 dBm (2412 MHz)

mA

400

540

800

Total Supply Current at linear output 21 dBm (2462 MHz)

mA

400

550

800

Total Supply Current at linear output 27 dBm

mA

700

S21

Small Signal Gain

dB

40.5

|S11|

Input Return Loss, 50

Ω source

dB

12.5

|S22|

Output Return Loss, 50

Ω source

dB

13.5

OP1dB

Output Power at 1 dB Gain Compression

dBm

36

PAE

Power Added Efficiency at linear output 21 dBm (2412 MHz)

%

4.4

Power Added Efficiency at linear output 21 dBm (2462 MHz)

%

5.2

Power Added Efficiency at linear output 27 dBm

%

14.8

2fo

2nd Harmonic Distortion at 27 dBm

dBc

-34.6

3fo

3rd Harmonic Distortion at 27 dBm

dBc

-53.3

Restricted Band Emission (RBE) @ 21 dBm at 2390 MHz (2412 MHz)

dBm

-50.5

-48

Restricted Band Emission (RBE) @ 21 dBm at 2483.5 MHz (2462 MHz) dBm

-50.5

-48

Error Vector Magnitude at 2.5%

dBm

27.8