IRFS7734PBF datasheet(2/12 Pages) IRF

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IRFB/S/SL7734PbF

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November 5, 2014

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

183

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

130

IDM

Pulsed Drain Current 

650

PD @TC = 25°C

Maximum Power Dissipation

290

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

± 20

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy 

350

Units

EAS (Thermally limited)

Single Pulse Avalanche Energy 

670

IAR

Avalanche Current 

See Fig 15, 16, 23a, 23b

EAR

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJC

Junction-to-Case 

–––

0.51

°C/W

RCS

Case-to-Sink, Flat Greased Surface (TO-220)

0.50

–––

RJA

Junction-to-Ambient (TO-220)

–––

RJA

Junction-to-Ambient (PCB Mount) (D2Pak) 

–––

Symbol

Parameter

Max.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

––– mV/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.8

3.5

 VGS = 10V, ID = 100A 

VGS(th)

Gate Threshold Voltage

2.1

–––

3.7

VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

VDS =75 V, VGS = 0V

–––

150

VDS =75V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Gate Resistance

–––

2.0

–––



–––

3.5

–––



VGS = 6.0V, ID = 50A 

Notes:



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 70µH, RG = 50, IAS = 100A, VGS =10V.



ISD  100A, di/dt  950A/µs, VDD  V(BR)DSS, TJ 175°C.



Pulse width

 400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

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