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IRFS7434PBF bảng dữ liệu(PDF) 3 Page - International Rectifier

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IRFS7434PBF bảng dữ liệu(HTML) 3 Page - International Rectifier

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IRFS/SL7434PbF
3
www.irf.com © 2014 International Rectifier
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November 19, 2014
S
D
G
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
211
–––
–––
S
Qg
Total Gate Charge
–––
216
324
Qgs
Gate-to-Source Charge
–––
51
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
77
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
139
–––
td(on)
Turn-On Delay Time
–––
24
–––
tr
Rise Time
–––
68
–––
td(off)
Turn-Off Delay Time
–––
115
–––
tf
Fall Time
–––
68
–––
Ciss
Input Capacitance
–––
10820
–––
Coss
Output Capacitance
–––
1540
–––
Crss
Reverse Transfer Capacitance
–––
1140
–––
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
–––
1880
–––
Coss eff. (TR)
Effective Output Capacitance (Time Related)
–––
2208
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Ãd
VSD
Diode Forward Voltage
–––
0.9
1.3
V
dv/dt
Peak Diode RecoveryÃfÃ
–––
5.0
–––
V/ns
trr
Reverse Recovery Time
–––
38
–––
TJ = 25°C
VR = 34V,
–––37–––
TJ = 125°C
IF = 100A
Qrr
Reverse Recovery Charge
–––
50
–––
TJ = 25°C
di/dt = 100A/μs g
–––50–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.9
–––
A
TJ = 25°C
TJ = 175°C, IS = 100A, VDS = 40V
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V
g
VDD = 20V
ID = 100A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 100A, VGS = 0V g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
ID = 30A
RG = 2.7
Ω
Conditions
VGS = 10V
g
VGS = 0V
nC
ns
pF
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
i, See Fig. 12
VGS = 0V, VDS = 0V to 32V
h
A
ns
nC
320™
–––
–––
–––
–––
1270*



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