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IRFS7430PBF bảng dữ liệu(PDF) 3 Page - International Rectifier

tên linh kiện IRFS7430PBF
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IRFS7430PBF bảng dữ liệu(HTML) 3 Page - International Rectifier

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IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier
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November 6, 2014
3
S
D
G
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
150
–––
–––
S
Qg
Total Gate Charge
–––
300
460
nC
Qgs
Gate-to-Source Charge
–––
77
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
98
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
202
–––
td(on)
Turn-On Delay Time
–––
32
–––
ns
tr
Rise Time
–––
105
–––
td(off)
Turn-Off Delay Time
–––
160
–––
tf
Fall Time
–––
100
–––
Ciss
Input Capacitance
–––
14240
–––
pF
Coss
Output Capacitance
–––
2130
–––
Crss
Reverse Transfer Capacitance
–––
1460
–––
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
–––
2605
–––
Coss eff. (TR)
Effective Output Capacitance (Time Related)
–––
2920
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
–––
–––
426
™
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1524
A
(Body Diode)
Ãd
VSD
Diode Forward Voltage
–––
0.86
1.2
V
dv/dt
Peak Diode Recovery
f
–––
2.7
–––
V/ns
trr
Reverse Recovery Time
–––
52
–––
ns
TJ = 25°C
VR = 34V,
–––
52
–––
TJ = 125°C
IF = 100A
Qrr
Reverse Recovery Charge
–––
97
–––
nC
TJ = 25°C
di/dt = 100A/μs
g
–––
97
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.3
–––
A
TJ = 25°C
Conditions
VGS = 10V
g
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VDS =20V
ID = 100A
ID = 30A
VDD = 20V
ID = 100A, VDS =0V, VGS = 10V
RG = 2.7
Ω
VGS = 10V
g
Conditions
VDS = 10V, ID = 100A
TJ = 25°C, IS = 100A, VGS = 0V
g
integral reverse
showing the
p-n junction diode.
MOSFET symbol
VGS = 0V, VDS = 0V to 32V
i
VGS = 0V, VDS = 0V to 32V
h
TJ = 175°C, IS = 100A, VDS = 40V



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