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DTC113EM3 bảng dữ liệu(PDF) 5 Page - ON Semiconductor

tên linh kiện DTC113EM3
Giải thích chi tiết về linh kiện  Digital Transistors (BRT) R1 = 1 k, R2 = 1 k
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DTC113EM3 bảng dữ liệu(HTML) 5 Page - ON Semiconductor

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MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3
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Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
4.3
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
3.0
5.0
−
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 5.0 mA)
VCE(sat)
−
−
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
−
1.2
0.5
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 20 mA)
Vi(on)
2
1.6
−
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
0.7
1.0
1.3
k
W
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤ 2%.



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