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IRFP3006PBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRFP3006PBF bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRFP3006PbF 1 www.irf.com © 2013 International Rectifier September 06, 2013 Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Gate Drain Source G D S VDSS 60V RDS(on) typ. 2.1m max. 2.5m ID (Silicon Limited) 270A ID (Package Limited) 195A Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IRFP3006PbF TO-247 Tube 25 IRFP3006PbF Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 270 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(Silicon Limited) 190 IDM Pulsed Drain Current 1080 PD @TC = 25°C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage ± 20 V TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lbfin (1.1Nm) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 320 mJ IAR Avalanche Current See Fig. 14, 15, 22a, 22b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.4 RCS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W RJA Junction-to-Ambient ––– 40 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 dv/dt Peak Diode Recovery 10 V/ns TO-247AC G D S D S G |
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