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IRFHM8337PBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRFHM8337PBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFHM8337TRPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 9.4 12.4 m VGS = 10V, ID = 12A ––– 14.5 17.9 VGS = 4.5V, ID =9.4A VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 25µA VGS(th) Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V,TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 µA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS =-20 V gfs Forward Transconductance 17 ––– ––– S VDS = 15V, ID = 9.4A Qg Total Gate Charge ––– 5.4 8.1 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.1 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 0.7 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 2.2 ––– ID = 9.4A Qgodr Gate Charge Overdrive ––– 1.5 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 2.9 ––– Qoss Output Charge ––– 3.8 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 2.0 ––– td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 11 ––– ns ID = 9.4A td(off) Turn-Off Delay Time ––– 9.9 ––– RG= 1.3 tf Fall Time ––– 5.6 ––– Ciss Input Capacitance ––– 755 ––– VGS = 0V Coss Output Capacitance ––– 171 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 83 ––– ƒ = 1.0MHz Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 5.0 RJC (Top) Junction-to-Case ––– 50 °C/W RJA Junction-to-Ambient ––– 45 RJA (<10s) Junction-to-Ambient ––– 31 Thermal Resistance Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 18 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 94 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 9.4A, VGS = 0V trr Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 9.4A, VDD = 15V Qrr Reverse Recovery Charge ––– 27 41 nC di/dt = 200A/µs A Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 13 mJ D S G |
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