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IRFHM8326PBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRFHM8326PBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFHM8326PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.8 4.7 m VGS = 10V, ID = 20A ––– 5.2 6.7 VGS = 4.5V, ID = 20A VGS(th) Gate Threshold Voltage 1.2 1.7 2.2 V VDS = VGS, ID = 50µA VGS(th) Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 70 ––– ––– S VDS = 10V, ID = 20A Qg Total Gate Charge ––– 39 ––– nC VGS = 10V, VDS = 15V, ID = 20A Qg Total Gate Charge ––– 20 30 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.8 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.6 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 6.5 ––– ID = 20A Qgodr Gate Charge Overdrive ––– 6.1 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 9.1 ––– Qoss Output Charge ––– 11 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 1.9 ––– td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 35 ––– ns ID = 20A td(off) Turn-Off Delay Time ––– 18 ––– RG=1.8 tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 2496 ––– VGS = 0V Coss Output Capacitance ––– 524 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 273 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. EAS Single Pulse Avalanche Energy ––– 58 IAR Avalanche Current ––– 20 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 25 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 278 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 15 23 ns TJ = 25°C, IF = 20A, VDD = 15V Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 300A/µs ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 3.4 RJC (Top) Junction-to-Case ––– 41 °C/W RJA Junction-to-Ambient ––– 44 RJA (<10s) Junction-to-Ambient ––– 31 Thermal Resistance |
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