PYA28C16B datasheet(2/10 Pages) PYRAMID

2 / 10 page

PYA28C16B - 2K x 8 EEPROM

Page 2

Document # EEPROM109 REV OR

Grade(2)

Ambient Temp

GND

Military

-55°C to +125°C

5.0V ± 10%

OPERATION

READ

Read operations are initiated by both OE and CE LOW.

The read operation is terminated by either CE or OE re-

turning HIGH. This two line control architecture elimi-

nates bus contention in a system environment. The data

bus will be in a high impedance state when either OE or

CE is HIGH.

BYTE WRITE

Write operations are initiated when both CE and WE are

LOW and OE is HIGH. The PYA28C16B supports both a

CE and WE controlled write cycle. That is, the address is

latched by the falling edge of either CE or WE, whichever

occurs last. Similarly, the data is latched internally by the

rising edge of either CE or WE, whichever occurs first. A

byte write operation, once initiated, will automatically con-

tinue to completion.

CHIP CLEAR

The contents of the entire memory of the PYA28C16B

may be set to the high state by the CHIP CLEAR opera-

tion. By setting CE low and OE to 12 volts, the chip is

cleared when a 10 msec low pulse is applied to WE.

DEVICE IDENTIFICATION

An extra 32 bytes of EEPROM memory are available to

the user for device identification. By raising A

9 to 12 ±

0.5V and using address locations 7E0H to 7FFH the ad-

ditional bytes may be written to or read from in the same

manner as the regular memory array.

DATA

POLLING

The PYA28C16B features DATA Polling as a method to

indicate to the host system that the byte write cycle has

completed. DATA Polling allows a simple bit test opera-

tion to determine the status of the PYA28C16B, eliminat-

ing additional interrupts or external hardware. During the

internal programming cycle, any attempt to read the last

byte written will produce the complement of that data on

I/O

7 (i.e., write data=0xxx xxxx, read data=1xxx xxxx).

Once the programming cycle is complete, I/O

7 will reflect

true data.

Sym Parameter

Value

Unit

Power Supply Pin with

Respect to GND

-0.3 to +6.25

TERM

Terminal Voltage with

Respect to GND (up to

6.25V)

-0.5 to +6.25

Operating Temperature

-55 to +125

°C

BIAS

Temperature Under Bias

-55 to +125

°C

STG

Storage Temperature

-65 to +150

°C

Power Dissipation

1.0

OUT

DC Output Current

MAXIMUM RATINGS(1)

RECOMMENDED OPERATING CONDITIONS

CAPACITANCES(4)

CC = 5.0V, TA = 25°C, f = 1.0MHz)

Sym

Parameter

Conditions Typ Unit

Input Capacitance

IN = 0V

OUT

Output Capacitance

OUT = 0V

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