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SW-442SMB bảng dữ liệu(PDF) 1 Page - Tyco Electronics

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Giải thích chi tiết về linh kiện  GaAs SPDT Terminated Switch DC - 3.0 GHz
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Trang chủ  http://www.macom.com
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GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
M/A-COM Division of AMP Incorporated
3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
GaAs SPDT Terminated Switch
DC - 3.0 GHz
SW-442
Features
Low Cost Plastic SOT-26 Package
Low Insertion Loss <0.6 dB @ 900 MHz
High Isolation >38 dB @ 900 MHz
Low Power Consumption <10µA @ +3V
Positive or Negative 2.5 to 8 V Control
Description
M/A-COM’s SW-442 is a GaAs monolithic switch in a low cost
SOT-26 surface mount plastic package. The SW-442 is ideally
suited for applications where very low power consumption, low
insertion loss, very small size and low cost are required. Typical
application is in dual band systems where switching between
small signal components is required such as filter banks, single
band LNA's, converters etc. The SW-442 can be used in applica-
tions up to 0.25 Watts in systems such as CDMA, W-CDMA,
PCS, DCS1800, GSM and other analog/digital wireless commu-
nications systems.
The SW-442 is fabricated using a mature 0.8 micron GaAs
MESFET process. The process features full passivation for
increased performance and reliability.
SOT-26 Plastic Package
Electrical Specifications T
A = 25°C
Ordering Information
Part Number
Package
SW-442 PIN
SOT-26 Plastic Package
SW-442TR
Forward Tape and Reel
1
SW-442RTR
Reverse Tape and Reel
1
SW-442SMB
Sample Board
1. Reference Application Note M513 for reel size information.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC - 1 GHz
dB
0.5
0.7
1- 2 GHz
dB
0.8
1.0
2 - 3 GHz
dB
1.1
1.25
Isolation
DC - 1 GHz
dB
36
38
1 - 2 GHz
dB
25
28
2 - 3 GHz
dB
21
22
VSWR
DC - 2 GHz
1.4:1
1.5:1
2 - 3 GHz
1.6:1
1.7:1
P
1dB (2.7V supply)
500 MHz - 3 GHz
dBm
24
P
1dB (5V supply)
500 MHz - 3 GHz
dBm
28
IP
2 (2.7V supply)
2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone
dBm
80
IP
3 (2.7V supply)
2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone
dBm
50
T
rise, Tfall
T
on, Toff
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-Band
ns
ns
mV
40
60
10
Gate Leakage
V
CTL = 2.5V
µA
6
15
PIN1
XX#Y


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