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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRF7853TRPBF. bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRF7853TRPBF. bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7853PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 14.4 18 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 11 ––– ––– S Qg Total Gate Charge ––– 28 39 Qgs Gate-to-Source Charge ––– 7.8 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 10 ––– RG Gate Resistance ––– 1.4 ––– Ω td(on) Turn-On Delay Time ––– 13 ––– tr Rise Time ––– 6.6 ––– td(off) Turn-Off Delay Time ––– 26 ––– ns tf Fall Time ––– 6.0 ––– Ciss Input Capacitance ––– 1640 ––– Coss Output Capacitance ––– 310 ––– Crss Reverse Transfer Capacitance ––– 71 ––– pF Coss Output Capacitance ––– 1600 ––– Coss Output Capacitance ––– 180 ––– Coss eff. Effective Output Capacitance ––– 320 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 2.3 (Body Diode) A ISM Pulsed Source Current ––– ––– 66 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 45 68 ns Qrr Reverse Recovery Charge ––– 84 130 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 20V VGS = -20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V g VGS = 10V f VDD = 50V ID = 5.0A RG = 6.2Ω TJ = 25°C, IS = 5.0A, VGS = 0V f TJ = 25°C, IF = 5.0A, VDD = 25V di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.3A f VDS = VGS, ID = 100µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz 610 5.0 Typ. ––– ––– Conditions VDS = 25V, ID = 5.0A ID = 5.0A VDS = 50V |
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