công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

RFHA3944 bảng dữ liệu(PDF) 3 Page - RF Micro Devices

tên linh kiện RFHA3944
Giải thích chi tiết về linh kiện  65W GaN Wide-Band Power Amplifier
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  RFMD [RF Micro Devices]
Trang chủ  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA3944 bảng dữ liệu(HTML) 3 Page - RF Micro Devices

  RFHA3944 Datasheet HTML 1Page - RF Micro Devices RFHA3944 Datasheet HTML 2Page - RF Micro Devices RFHA3944 Datasheet HTML 3Page - RF Micro Devices RFHA3944 Datasheet HTML 4Page - RF Micro Devices RFHA3944 Datasheet HTML 5Page - RF Micro Devices RFHA3944 Datasheet HTML 6Page - RF Micro Devices RFHA3944 Datasheet HTML 7Page - RF Micro Devices RFHA3944 Datasheet HTML 8Page - RF Micro Devices RFHA3944 Datasheet HTML 9Page - RF Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131024
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 11
RFHA3944
Parameter
Specification
Unit
Condition
Min
Typ
Max
Capacitance
CRSS
3.5
pF
VG = -8V, VD = 0V
CISS
29
pF
COSS
21
pF
RF Functional Test
Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA
ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a
standard tuned test fixture
VGSQ
-1.3
-0.9
-0.6
V
VDSQ = 48V, IDSQ = 540mA
Gain
13.5
14.5
dB
IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 42.4dBm,
f = 2140MHz
Drain Efficiency
27.5
31
%
Input Return Loss
-11
-7
dB
Output PAR (CCDF at 0.01%)
5.0
6.0
dB
RF Typical Performance
Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA
ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a
standard tuned test fixture
Gain
15.0
dB
WCDMA (3GPP TM1, 7.5dB PAR at 0.01% CCDF), POUT = 41.8dBm,
f = 2140MHz
Drain Efficiency
28.0
%
Input Return Loss
-12
dB
Adjacent Channel Power
-42
dBc
Gain
14.5
dB
CW, f = 2140MHz
Output Power
48.1
dBm
Drain Efficiency
55
%



Html Pages

1 2 3 4 5 6 7 8 9 10 11


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com