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IRF6715MPBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRF6715MPBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6715MPbF 2 www.irf.com Pulse width ≤ 400µs; duty cycle ≤ 2% Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 17 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.3 1.6 m Ω ––– 2.1 2.7 VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 135 ––– ––– S Qg Total Gate Charge ––– 40 59 Qgs1 Pre-Vth Gate-to-Source Charge ––– 12 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 5.3 ––– nC Qgd Gate-to-Drain Charge ––– 12 ––– Qgodr Gate Charge Overdrive ––– 11 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 17 ––– Qoss Output Charge ––– 26 ––– nC RG Gate Resistance ––– 1.1 2.0 Ω td(on) Turn-On Delay Time ––– 20 ––– tr Rise Time ––– 31 ––– ns td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 5340 ––– Coss Output Capacitance ––– 1280 ––– pF Crss Reverse Transfer Capacitance ––– 600 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)Ãg VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 37 56 nC di/dt = 200A/µs i TJ = 25°C, IS = 27A, VGS = 0V i showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 27A i TJ = 25°C, IF = 27A VGS = 4.5V ID = 27A VGS = 0V VDS = 13V ID = 27A VDD = 13V, VGS = 4.5VÃi VGS = 20V VGS = -20V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 34A i VDS = 20V, VGS = 0V VDS = 13V VDS = 20V, VGS = 0V, TJ = 125°C VDS = 13V, ID = 27A Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V VDS = VGS, ID = 100µA 270 ––– ––– 98 A ––– ––– MOSFET symbol RG = 1.8Ω |
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