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SGA2263Z bảng dữ liệu(PDF) 2 Page - RF Micro Devices |
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SGA2263Z bảng dữ liệu(HTML) 2 Page - RF Micro Devices |
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2 / 6 page ![]() 2 of 6 DS140509 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SGA2263Z Typical Performance at Key Operating Frequencies Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID)40 mA Max Device Voltage (VD)4 V Max RF Input Power +18 dBm Max Junction Temp (TJ)+150 °C Operating Temp Range (TL) -55 to +110 °C Max Storage Temp +150 °C Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz Small Signal Gain dB 14.9 14.7 13.5 13.2 Output Third Order Intercept Point dBm 20.4 20.2 18.0 16.9 Output Power at 1dB Compression dBm 7.6 7.5 6.1 5.4 Input Return Loss dB 21.3 21.5 19.6 17.6 17.2 15.0 Output Return Loss dB 24.1 23.0 27.8 25.3 23.4 26.7 Reverse Isolation dB 17.8 18.5 18.7 19.1 19.2 19.2 Noise Figure dB 3.3 3.2 3.5 4.0 Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) OIP 3 vs. Frequency V D= 2.2 V, ID= 20 mA P 1dB vs. Frequency V D= 2.2 V, ID= 20 mA T L=+25ºC T L=+25ºC 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Noise Figure vs. Frequency V D= 2.2 V, ID= 20 mA T L=+25ºC |
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