Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA0163Z

DC to 4500MHz, SILICON GERMANIUM

CASCADABLE GAIN BLOCK

The SGA0163Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal perfomance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor and an

optional RF choke are required for operation.

0

5

10

15

01

23

45

6

Small Signal Gain vs. Frequency

Frequency GHz



DCto4500MHz Operation



Single Voltage Supply



Low Current Draw: 8mA at

2.1V typ.



High Output Intercept:

10dBm Typ. at 1900MHz

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS111011



Package: SOT-363

SGA0163ZDC

to 4500MHz,

Silicon Germa-

nium Cascad-

able Gain

Block

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Output Power at 1dB Compression

-1.8

dBm

850MHz

-1.8

dBm

1950MHz

-2.4

dBm

2400MHz

Third Order Intercept Point

9.4

dBm

850MHz

9.8

dBm

1950MHz

9.2

dBm

2400MHz

Small Signal Gain

12.7

dB

850MHz

12.0

dB

1950MHz

11.6

dB

2400MHz

3dB Bandwidth

4500

MHz

Input VSWR

1.6:1

DC to 4500MHz

Output VSWR

1.3:1

DC to 4500MHz

Reverse Isolation

17.6

dB

850MHz

18.1

dB

1950MHz

18.3

dB

2400MHz

4.6

dB

1950MHz

Device Operating Voltage

2.1

V

Device Operating Current

6

8

10

mA

Thermal Resistance

255

°C/W

junction - lead