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C106M1 bảng dữ liệu(PDF) 1 Page - Central Semiconductor Corp

tên linh kiện C106M1
Giải thích chi tiết về linh kiện  SILICON CONTROLLED RECTIFIER
PDF  2 Pages
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nhà sản xuất  CENTRAL [Central Semiconductor Corp]
Trang chủ  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

C106M1 bảng dữ liệu(HTML) 1 Page - Central Semiconductor Corp

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C106A1
C106D1
C106B1
C106E1
C106C1
C106M1
SILICON CONTROLLED RECTIFIER
4 AMP, 100 THRU 600 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106A1 series
are PNPN silicon controlled rectifiers designed for
applications such as temperature, light, speed control,
process and remote control, and warning systems
where reliability of operation is important.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
C106
C106
C106
C106
C106
C106
SYMBOL
A1
B1
C1
D1
E1
M1
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
100
200
300
400
500
600
V
RMS On-State Current
IT(RMS)
4.0
A
Peak One Cycle Surge (60Hz)
ITSM
20
A
I2t Value for Fusing (t>1.5ms)
I2t
0.5
A2s
Peak Gate Power
PGM
0.5
W
Average Gate Power
PG(AV)
0.1
W
Peak Forward Gate Current
IGFM
0.2
A
Peak Reverse Gate Voltage
VGRM
6.0
V
Storage Temperature
Tstg
-40 to +150
°C
Junction Temperature
TJ
-40 to +110
°C
Thermal Resistance
ΘJC
3.0
°C/W
Thermal Resistance
ΘJA
75
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
10
μA
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C
100
μA
VTM
IFM=4.0A
2.2
V
IGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ
200
μA
IGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C
500
μA
VGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ
0.4
0.8
V
VGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C
0.5
1.0
V
VGT
VAK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2
V
IHX
VD=12V, RGK=1.0KΩ
0.3
3.0
mA
IHX
VD=12V, RGK=1.0KΩ, TC=-40°C
0.4
6.0
mA
IHX
VD=12V, RGK=1.0KΩ, TC=110°C
0.14
2.0
mA
ILX
VD=12V, RGK=1.0KΩ
0.3
4.0
mA
ILX
VD=12V, RGK=1.0KΩ, TC=-40°C
0.4
8.0
mA
dv/dt
VD=Rated VDRM, RGK=1.0KΩ, TC=110°C
8.0
V/μs
tgt (turn-on time)
1.2
μs
tq (turn-off time)
40
μs
TO-202 CASE
R1 (23-January 2012)
www.centr a lsemi.com


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