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C106M1 bảng dữ liệu(PDF) 1 Page - Central Semiconductor Corp |
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C106M1 bảng dữ liệu(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() C106A1 C106D1 C106B1 C106E1 C106C1 C106M1 SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of operation is important. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) C106 C106 C106 C106 C106 C106 SYMBOL A1 B1 C1 D1 E1 M1 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 300 400 500 600 V RMS On-State Current IT(RMS) 4.0 A Peak One Cycle Surge (60Hz) ITSM 20 A I2t Value for Fusing (t>1.5ms) I2t 0.5 A2s Peak Gate Power PGM 0.5 W Average Gate Power PG(AV) 0.1 W Peak Forward Gate Current IGFM 0.2 A Peak Reverse Gate Voltage VGRM 6.0 V Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +110 °C Thermal Resistance ΘJC 3.0 °C/W Thermal Resistance ΘJA 75 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 μA IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C 100 μA VTM IFM=4.0A 2.2 V IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ 200 μA IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C 500 μA VGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ 0.4 0.8 V VGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C 0.5 1.0 V VGT VAK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2 V IHX VD=12V, RGK=1.0KΩ 0.3 3.0 mA IHX VD=12V, RGK=1.0KΩ, TC=-40°C 0.4 6.0 mA IHX VD=12V, RGK=1.0KΩ, TC=110°C 0.14 2.0 mA ILX VD=12V, RGK=1.0KΩ 0.3 4.0 mA ILX VD=12V, RGK=1.0KΩ, TC=-40°C 0.4 8.0 mA dv/dt VD=Rated VDRM, RGK=1.0KΩ, TC=110°C 8.0 V/μs tgt (turn-on time) 1.2 μs tq (turn-off time) 40 μs TO-202 CASE R1 (23-January 2012) www.centr a lsemi.com |
Số phần tương tự - C106M1 |
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Mô tả tương tự - C106M1 |
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