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RFAM3790 bảng dữ liệu(PDF) 1 Page - RF Micro Devices |
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RFAM3790 bảng dữ liệu(HTML) 1 Page - RF Micro Devices |
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1 / 7 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 7 RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER The RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Power Enable INPUT OUTPUT Preamp Driver V+ Att. adjust Functional Block Diagram Ordering Information RFAM3790SB Sample bag with 5 pieces RFAM3790SQ Sample bag with 25 pieces RFAM3790SR 7” Reel with 100 pieces RFAM3790TR7 7” Reel with 250 pieces RFAM3790TR13 13” Reel with 750 pieces RFAM3790PCBA-410 Fully Assembled Evaluation Board RFAM3790PCK-410 Fully Assembled Evaluation Board with Sample Bag Package: 9 pin, 11.0 mm x 11.0 mm x 1.375mm Features Excellent Linearity Extremely High Output Capability Voltage Controlled Attenuator Power Enable Featrure Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under all Terminations 27.5 dB Typical Gain at 1218MHz 410mA Typical at 12VDC Applications 45MHz to 1218MHz Downstream Edge QAM RF Modulators Headend Equipment |
Số phần tương tự - RFAM3790 |
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Mô tả tương tự - RFAM3790 |
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