DMP4050SSD

Document Number DS32107 Rev 3 - 2

2 of 8

www.diodes.com

April 2013

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMP4050SSD

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-40

V

Gate-Source Voltage

(Note 5)

20

V

Continuous Drain Current

(Notes 9 & 11)

-5.2

A

-4.2

(Notes 6 & 9)

-4.0

Pulsed Drain Current

(Notes 8 & 9)

-20.0

A

Continuous Source Current (Body Diode)

(Notes 7 & 9)

-3.2

A

Pulsed Source Current (Body Diode)

(Notes 8 & 9)

-20.0

A

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Notes 6 & 9)

1.25

10.0

W

mW/°C

(Notes 6 & 10)

1.8

14.3

(Notes 7 & 9)

2.14

17.2

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

100

°C/W

(Notes 6 & 10)

70

(Notes 7 & 9)

58

Thermal Resistance, Junction to Lead

(Notes 9 & 11)

53

Operating and storage temperature range

-55 to +150

°C

Notes:

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. Same as note (3), except the device is measured at t

 10 sec.

8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

9. For a dual device with one active die.

10. For a device with two active die running at equal power.

11. Thermal resistance from junction to solder-point (at the end of the drain lead).