1 of 6

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Ordering Information

4

VPD2

3

MODE

2

VPD1

13

14

15

16

1

10 VCC

11 VCC1

12 VCC1

5

67

8

9

RF3855

3.1V LINEAR POWER AMPLIFIER

The RF3855 is a high-power, high-efficiency linear amplifier IC targeting L-

BAND SATCOM Applications. The device is manufactured on an advanced

Gallium Arsenide process, and has been designed for use as the final RF

amplifier applications in the 1611MHz to 1618MHz band. The package is

a 4mmx4mm, 16-pin QFN plastic package with backside ground.

Features



Single 3.1V Supply

Applications



L-BAND SATCOM Applications

RF3855

3.1V Linear Power Amplifier

DS110914



RF38553.1V

Linear Power

Amplifier

Package Style: QFN, 16-Pin, 4 x 4