DMN3115UDM

Document number: DS31187 Rev. 8 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated

DMN3115UDM

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±8

V

Drain Current (Note 6)

3.2

A

Pulsed Drain Current (Note 6)

12.8

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

900

mW

Thermal Resistance, Junction to Ambient

139

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30





V

Zero Gate Voltage Drain Current





1

μA

Gate-Source Leakage





5

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5



1.0

V

Static Drain-Source On-Resistance



40

50

76

60

80

130

mΩ

Forward Transfer Admittance



8



S

Diode Forward Voltage (Note 7)



0.7

1.1

V

DYNAMIC CHARACTERISTICS

Input Capacitance



476



pF

f = 1.0MHz

Output Capacitance



77



pF

Reverse Transfer Capacitance



59



pF

Notes:

6. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.

7. Short duration pulse test used to minimize self-heating effect.

0

1

2

3

4

5

6

7

8

9

10

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V

= 5V

Pulsed

DS

0

1

2

3

4

5

6

7

8

9

10

0.5

1

1.5

2

0