DMC2004LPK

Document number: DS30854 Rev. 7 - 2

2 of 8

www.diodes.com

February 2013

© Diodes Incorporated

DMC2004LPK

Characteristic

Symbol

Value

Unit

Drain Source Voltage

20

V

Gate-Source Voltage

±8

V

Drain Current (Note 5)

750

540

mA

Characteristic

Symbol

Value

Unit

Drain Source Voltage

-20

V

Gate-Source Voltage

±8

V

Drain Current (Note 5)

-600

-430

mA

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

500

mW

Thermal Resistance, Junction to Ambient

250

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

20

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

± 1

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.5

—

1.0

V

Static Drain-Source On-Resistance

—

—

—

0.4

0.5

0.7

0.55

0.70

0.90

Ω

Forward Transfer Admittance

200

—

—

mS

Diode Forward Voltage (Note 6)

0.5

—

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

—

—

150

pF

f = 1.0MHz

Output Capacitance

—

—

25

pF

Reverse Transfer Capacitance

—

—

20

pF

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-20

—

—

V

Zero Gate Voltage Drain Current

—

—

-1.0

µA

Gate-Source Leakage

—

—

± 1.0

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.5

—

-1.0

V

Static Drain-Source On-Resistance

—

0.7

1.1

1.7

0.9

1.4

2.0

Ω

Forward Transfer Admittance

200

—

—

mS

Diode Forward Voltage (Note 5)

-0.5

—

-1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

—

—

175

pF

f = 1.0MHz

Output Capacitance

—

—

30

pF

Reverse Transfer Capacitance

—

—

20

pF

Notes:

5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.