HRP35N04K datasheet(3/8 Pages) SEMIHOW

3 / 8 page

◎ SEMIHOW REV.A0,December 2014

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

1000

2000

3000

4000

5000

6000

7000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

100

120

140

DS = 32V

D = 30A

G, Total Gate Charge [nC]

Top :

15 V

10 V

8 V

7 V

6 V

5.5 V

5 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

0.0

0.4

0.8

1.2

1.6

2.0

0.1

100

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

175

0.1

100

* Notes :

1. V

DS= 20V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

175

120

180

240

300

360

2.6

2.8

3.0

3.2

3.4

GS = 10V

∗ Note : T

J = 25

D, Drain Current [A]

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