HCS7N70S datasheet(2/7 Pages) SEMIHOW

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Electrical Characteristics T

J=25

C unless otherwise specified

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Continuous Source-Drain Diode Forward Current

Pulsed Source-Drain Diode Forward Current

Source-Drain Diode Forward Voltage

S = 2.3 A, VGS = 0 V

1.2

trr

Reverse Recovery Time

S = 2.3 A, VGS = 0 V

F/dt = 100 A/

150

Qrr

Reverse Recovery Charge

1.1

On Characteristics

DSS

Drain-Source Breakdown Voltage

GS = 0 V, ID = 250

700

DSS

Zero Gate Voltage Drain Current

DS = 700 V, VGS = 0 V

DS = 560 V, TJ = 125

100

GSS

Gate-Body Leakage Current

GS =

20 V, V

DS = 0 V

100

Off Characteristics

iss

Input Capacitance

DS = 100 V, VGS = 0 V,

f = 1.0 MHz

340

440

oss

Output Capacitance

rss

Reverse Transfer Capacitance

5.0

6.5

Gate Resistance

GS = 0 V, VDS = 0 V, f = 1MHz

5.2

Dynamic Characteristics

d(on)

Turn-On Time

DS = 350 V, ID = 2.3 A,

G = 10

Turn-On Rise Time

d(off)

Turn-Off Delay Time

130

Turn-Off Fall Time

Total Gate Charge

DS = 560 V, ID = 2.3 A,

GS = 10 V

9.0

Gate-Source Charge

2.0

Gate-Drain Charge

3.0

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

Gate Threshold Voltage

DS = VGS, ID = 250

2.5

4.5

DS(ON)

Static Drain-Source

On-Resistance

GS = 10 V, ID = 2.3 A

0.95

1.1

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. I

AS=1.5A, VDD=50V, RG=25

, Starting T

J =25 C

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