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LED880-66-60 bảng dữ liệu(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED880-66-60 bảng dữ liệu(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 28.03.2012 LED880-66-60 1 of 2 LED880-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaAs LED880-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications • Structure: AlGaAs, 60 LED chips • Peak Wavelength: typ. 880 nm • Optical Output Power: typ. 1.5 W • Package: TO-66 stem with AIN, clear silicon and epoxy resin Absolute Maximum Ratings (TC=25°C) Item Symbol Value Unit Power Dissipation PD 7.5 W Forward Current IF 1200 mA Pulsed Forward Current *1 IFP 6 A Reverse Voltage VR 50 V Operating Temperature Topr -30 … +80 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature *2 Tsol 265 °C *1 duty = 1%, pulse width = 1 µs *2 must be completed within 3 seconds Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Total Radiated Power PO IF = 800 mA - 1.5 - W Total Radiated Power PO IFP = 5 A - 9.0 - W Radiant Intensity IE IF = 800 mA - (400) - mW/sr Axial Radiated Power * I IF = 800 mA - 0.03 - mW/cm² Forward Voltage VF IF = 800 mA - 7.5 - V Peak Wavelength λP IF = 800 mA 875 885 895 nm Half Width Δλ IF = 800 mA - 40 - nm Viewing Half Angle Θ1/2 IF = 800 mA - ±60 - deg. Rise Time tf IF = 800 mA - 15 - ns Fall Time tf IF = 800 mA - 10 - ns * L = 1m Heat Sink is required, LED is required to keep less than 60°C Notes • This high power LED must be cooled! • Do not view directly into the emitting area of the LED during operation! • The above specifications are for reference purpose only and subjected to change without prior notice. (Unit: mm) |
Số phần tương tự - LED880-66-60 |
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Mô tả tương tự - LED880-66-60 |
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