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LED620-66-60 bảng dữ liệu(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED620-66-60 bảng dữ liệu(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 25.04.2012 LED620-66-60 1 of 2 LED620-66-60 TECHNICAL DATA High Power LED Array, 60 chips InGaAlP LED620-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaAlP diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications (Unit: mm) • Structure: InGaAlP, 60 LED chips • Peak Wavelength: 620 nm • Optical Output Power: 120 mW • Package: TO-66 stem with AIN • Lens: clear epoxy resin Absolute Maximum Ratings (TA=25°C) Item Symbol Value Unit Power Dissipation PD 4.5 W Forward Current IF 400 mA Pulse Forward Current * 1 IFP 600 mA Reverse Voltage VR 50 V Operating Temperature Topr -30 … +80 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature * 2 Tsol 240 °C * 1 duty = 1%, pulse width = 1 µs * 2 must be completed within 3 seconds at 260°C Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Peak Wavelength λ P IF = 240 mA 610 620 630 nm Half Width Δλ IF = 240 mA - 20 - nm Total Radiated Power PO IF = 240 mA - 120 - mW Radiant Intensity IE IF = 240 mA - 32 - mW/sr Brightness IV IF = 240 mA - 7.0 - cd Forward Voltage VF IF = 240 mA - 10.0 - V Reverse Voltage VR IR = 10 µA 50 - - V Viewing Half Angle Θ 1/2 IF = 240 mA - ±60 - deg. Heat Sink is required , to keep the LED at ≤60 °C. Note: The above specifications are for reference purpose only and subjected to change without prior notice. |
Số phần tương tự - LED620-66-60 |
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Mô tả tương tự - LED620-66-60 |
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