DMC4028SSD

Document Number: D35041 Rev: 2 - 2

2 of 11

www.diodes.com

April 2013

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A Product Line of

Diodes Incorporated

DMC4028SSD

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Units

Drain-Source Voltage

40

-40

V

Gate-Source Voltage

(Note 5)

20

20

V

Continuous Drain Current

(Notes 7 & 9)

7.2

5.2

A

5.5

4.2

(Notes 6 & 9)

5.4

4

(Notes 6 & 10)

6.5

4.8

Pulsed Drain Current

(Notes 7 & 9)

27.3

20.4

A

Continuous Source Current (Body diode)

(Notes 7 & 9)

3.35

3.15

A

Pulsed Source Current (Body diode)

(Notes 8 & 9)

27.3

20.4

A

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Unit

Power Dissipation

Linear Derating Factor

(Notes 6 & 9)

1.25

10

W

mW/°C

(Notes 6 & 10)

1.8

14.3

(Notes 7 & 9)

2.16

17.2

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

100

°C/W

(Notes 6 & 10)

70

(Notes 7 & 9)

58

Thermal Resistance, Junction to Lead

(Notes 9 & 11)

53

53

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. Same as note (5), except the device is measured at t

 10 sec.

8. Same as note (5), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

9. For a dual device with one active die.

10. For a device with two active die running at equal power.

11. Thermal resistance from junction to solder-point (at the end of the drain lead).