28.04.2015

H2A1-H365

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H2A1-H365-r4

High Power single chip LED

H2A1-H365 is a InGaN based, high power 365 nm single chip LED in standard hexagonal Aluminum package for

general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are

also suitable for M3 or M4 mounting screws. Large electrical interconnection pads on the PCB allow for convenient

installation.

Specifications

•

Structure: InGaN

•

Peak Wavelength: 365 nm

•

Optical Output Power: typ. 270 mW

•

Lead free product - RoHS compliant

Parameter

Symbol

Value

Unit

Power Dissipation, DC

1000

mW

Forward Current, DC

500

mA

Pulsed Current (1% duty cycle, 1kHz)

1000

mA

Reverse Voltage

-5

V

Operating Temperature

-30 … +70

°C

Storage Temperature

-30 … +85

°C

Soldering Temperature (max. 1,5 s)

330

°C

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Current

350

mA

Viewing Angle

φ

±

75

deg.

CW Output Power (rank 4)

270

mW

Peak Wavelength

λ

P

365

nm

Forward Voltage

3.5

4.2

V

Half Width (FWHM)

Δλ

12

20

nm

Wavelength measurements tolerance is +/- 2%

Output power measurement tolerance is +/- 10%

Voltage measurement tolerance is +/- 2%

Device Materials

Item

Material

foundation

Plastic

Lens

Silicone resin

Electrodes

AgCu

PCB

Al