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MBD701 bảng dữ liệu(PDF) 1 Page - Leshan Radio Company |
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MBD701 bảng dữ liệu(HTML) 1 Page - Leshan Radio Company |
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1 / 2 page ![]() LESHAN RADIO COMPANY, LTD. G18–1/2 1 3 2 MBD701 MMBD701LT1 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) MBD701 MMBD701LT1 Rating Symbol Value Unit Reverse Voltage V R 70 Volts Forward Power Dissipation P F @ T A = 25°C 280 200 mW Derate above 25°C 2.8 2.0 mW/°C Operating Junction T J °C Temperature Range –55 to +125 Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MMBD701LT1 = 5H ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min typ M a x Unit Reverse Breakdown Voltage (I R = 10 µAdc) V (BR)R 70 — — Volts Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1 C T — 0.5 1.0 pF Reverse Leakage (V R = 35 V) Figure 3 I R — 9.0 200 nAdc Forward Voltage (I F = 1.0 mAdc) Figure 4 V F — 0.42 0.5 Vdc Forward Voltage (I F = 10 mAdc) Figure 4 V F — 0.7 1.0 Vdc NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk. 70 VOLTS HIGH-VOLTAGE SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES CASE 318–08, STYLE8 SOT– 23 (TO–236AB) 3 CATHODE 1 ANODE These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost,high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.0 pF @ V R = 20 V • High Reverse Voltage – to 70 Volts • Low Reverse Leakage – 200 nA (Max) Silicon Hot –Carrier Diodes |
Số phần tương tự - MBD701 |
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Mô tả tương tự - MBD701 |
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