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STM6966 bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

tên linh kiện STM6966
Giải thích chi tiết về linh kiện  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
Trang chủ  http://www.samhop.com.tw
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STM6966 bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±10
uA
VGS(th)
1
V
63
gFS
8
S
VSD
CISS
790
pF
COSS
50
pF
CRSS
40
pF
Qg
15
nC
13
nC
Qgs
21
nC
Qgd
27
tD(ON)
13.5
ns
tr
1.8
ns
tD(OFF)
3.8
ns
tf
ns
Gate-Drain Charge
VDS=30V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=30V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=30V,ID=4.5A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=4.5A
VDS=5V , ID=4.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=3.7A
85
m ohm
c
f=1.0MHz
c
VDS=30V,ID=4.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.79
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting Tj=25
O C,L=0.5mH,VDD=30V,VGS=10V.(See Figure13)
_
_
STM6966
www.samhop.com.tw
Oct,14,2009
2
nC
VDS=30V,ID=4.5A,VGS=4.5V
6.6
_
1.8
80
110
IS
Maximum Continuous Drain-Source Diode Forward Current
1
A
Ver 1.0



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