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STM301N bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

tên linh kiện STM301N
Giải thích chi tiết về linh kiện  Super high dense cell design for low RDS(ON).
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STM301N bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
1
V
36
gFS
18.5
S
VSD
CISS
3100
pF
COSS
165
pF
CRSS
130
pF
Qg
45
nC
36
nC
Qgs
120
nC
Qgd
25
tD(ON)
50
ns
tr
4.7
ns
tD(OFF)
11
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=50V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=50V,ID=5.2A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=5.2A
VDS=10V , ID=5.2A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=5A
39
m ohm
c
f=1.0MHz
c
VDS=50V,ID=5.2A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.75
1.3
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=50V,VGS=10V.(See Figure13)
_
_
STM301N
Ver1.0
www.samhop.com.tw
Jan,25,2010
2
nC
VDS=50V,ID=5.2A,VGS=4.5V
23
_
1.5
48
56
IS
Maximum Continuous Drain-Source Diode Forward Current
2
A



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