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STF8211 bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

tên linh kiện STF8211
Giải thích chi tiết về linh kiện  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
Trang chủ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STF8211 bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

  STF8211 Datasheet HTML 1Page - SamHop Microelectronics Corp. STF8211 Datasheet HTML 2Page - SamHop Microelectronics Corp. STF8211 Datasheet HTML 3Page - SamHop Microelectronics Corp. STF8211 Datasheet HTML 4Page - SamHop Microelectronics Corp. STF8211 Datasheet HTML 5Page - SamHop Microelectronics Corp. STF8211 Datasheet HTML 6Page - SamHop Microelectronics Corp. STF8211 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±1
uA
VGS(th)
0.5
V
10.5
gFS
35
S
VSD
CISS
705
pF
COSS
235
pF
CRSS
218
pF
Qg
25
nC
89
nC
Qgs
110
nC
Qgd
102
tD(ON)
13.4
ns
tr
2
ns
tD(OFF)
6
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=10V
ID=1A
VGS=4.0V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=4.0V , ID=2.0A
VDS=5V,ID=4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=16V , VGS=0V
VGS=±8V ,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=2.5V , ID=2.0A
13.5
15.0
20.0
m ohm
b
f=1.0MHz
b
VDS=10V,ID=4A,
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.76
1.2
V
STF8211
Ver 1.5
www.samhop.com.tw
Jul,18,2014
2
0.7
1.5
VDS=10V,ID=4A,VGS=4.0V
VDS=10V,ID=4A,VGS=2.5V
10.2
nC
11.0
m ohm
VGS=3.7V , ID=2.0A
14.5
12.5
m ohm
VGS=3.1V , ID=2.0A
16.5
8.0
10.5
8.5
9.5
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 ,2oz.
_
_



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