STF8204 datasheet(2/8 Pages) SAMHOP

2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±1

VGS(th)

0.5

m ohm

VGS=4.5V , ID=2.4A

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=1.0mA

VDS=18V , VGS=0V

VGS=±8V ,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=250uA

ON CHARACTERISTICS

STF8204

Ver 2.1

0.85

1.5

gFS

CISS

980

COSS

213

CRSS

189

Qgs

116

Qgd

tD(ON)

10.7

2.1

tD(OFF)

5.4

Gate-Drain Charge

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=16V

ID=4.75A

VGS=4.5V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=5V , ID=4.75A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Reverse Transfer Capacitance

VGS=4.0V , ID=2.4A

m ohm

f=1.0MHz

VDS=16V,ID=9.5A,

VGS=4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD

Diode Forward Voltage

VGS=0V,IS=9.5A

0.84

1.2

www.samhop.com.tw

Jul,18,2014

7.8

9.0

8.0

9.5

VGS=3.7V , ID=2.4A

m ohm

VGS=2.5V , ID=2.4A

m ohm

10.5

13.5

6.3

6.5

8.0

VGS=3.1V , ID=2.4A

m ohm

9.0

11.2

7.0

8.2

10.0

6.7

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Mounted on FR4 Board of 1 inch2 ,2oz.

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