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SDUD02N25 bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

tên linh kiện SDUD02N25
Giải thích chi tiết về linh kiện  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
Trang chủ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDUD02N25 bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

  SDUD02N25 Datasheet HTML 1Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 2Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 3Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 4Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 5Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 6Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 7Page - SamHop Microelectronics Corp. SDUD02N25 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
250
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
0.9
S
VSD
CISS
185
pF
COSS
31
pF
CRSS
6.1
pF
Qg
13.4
nC
12.2
nC
Qgs
21.5
nC
Qgd
5.6
tD(ON)
ns
tr
1.28
ns
tD(OFF)
1.48
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=125V
ID=1A
VGS=10V
RGEN=25 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=125V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=1A
VDS=10V , ID=1A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=200V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
4.2
b
f=1.0MHz
b
VDS=125V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
1.4
V
Notes
SDU/D02N25
www.samhop.com.tw
Jun,07,2012
2
4.36
_
_
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=1mH,RG=25
Ω,VDD = 50V.(See Figure12)
Ver 1.1
3.2
0.81
3



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