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MMBT3906FZ bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

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MMBT3906FZ
Document number: DS37159 Rev. 2 - 2
2 of 7
www.diodes.com
October 2014
© Diodes Incorporated
MMBT3906FZ
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-6.0
V
Collector Current
IC
-200
mA
Peak Pulse Collector Current
ICM
-500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
270
mW
(Note 6)
925
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
465
°C/W
(Note 6)
135
Thermal Resistance, Junction to Lead
(Note 7)
RJL
135
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
200
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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