10.09.2012

LED39-PR

1 of 3

LED39-PR

TECHNICAL DATA

Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown

on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions

InAsSbP with P content 50% are used for good electron confinement.

LED39-PR has a stable ouput power and a lifetime more then 80000 hours.

Specifications

(Unit: mm)

•

Structure:

InAsSb/InAsSbP

•

Peak Wavelength:

typ. 3.90 µm

•

Optical Output Power:

typ. 20 µW qCW

•

Package:

TO-18

with PR and without window

Item

Condition

Value

Unit

Min.

Typ.

Max.

Peak Wavelength

T=300 K

3.85

3.90

3.94

µm

FWHM

150 mA CW

0.55

0.65

0.75

µm

Quasi-CW

Optical Power

200 mA qCW

15

20

30

µW

Pulsed

Optical Power

1 A

180

200

220

mW

Switching Time

T=300 K

10

20

30

ns

Operation Voltage

200 mA qCW

0.2

-

0.8

V

Operating

Temperature

-200 … +50

°C

Emitting Area

300 x 300

µm

Soldering

Temperature

180

°C

Package

TO-18, with parabol reflector and without window

Operation Instructions

•

LED basic circuit connection

•

We recommend to use one of our drivers

and evaluation boards designed for those

Mid-IR LEDs

D-11, D-31, D-31M

DLT-27, DLT-37

mD-1c, mD-1p