24.11.2010

LED36-PR

1 of 2

LED36-PR

TECHNICAL DATA

Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown

on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions

InAsSbP with P content 50% are used for good electron confinement.

LED36-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features

• Structure: InAsSb/InAsSbP

• Peak Wavelength: typ. 3.65 µm

• Optical Ouput Power: typ. 30 µW qCW

• Package: TO-18, with PR and without window

Specifications

Rating

Item

Condition

Min.

Typ.

Max.

Unit

Peak Wavelength

T=300 K

3.60

3.65

3.70

µm

FWHM

150 mA CW

0.40

0.50

0.60

µm

Quasi-CW

Optical Power

200 mA qCW

20

30

40

µW

Pulsed

Optical Power

1 A

180

200

220

mW

Switching Time

T=300 K

10

20

30

ns

Operation Voltage

200 mA qCW

0.2

-

1.0

V

Operating

Temperature

-240 … +50

°C

Emitting Area

300x300

µm

Soldering

Temperature

180

°C

Package

TO-18, with parabol reflector and without window

(Unit: mm)

Operating Regime

Quasi-CW

•

Maximum current 220 mA

•

Recommended current 150-200mA

Pulsed

•

Maximum current 1 A

(puls lenght 500 ns, repetition rate 2kHz)