TSM60N06CPROG datasheet(2/4 Pages) TSC

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TSM60N06

60V N-Channel Power MOSFET

2/4

Version: A12

Electrical Specifications (TC = 25℃ unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Drain-Source On-State Resistance

VGS = 10V, ID = 30A

RDS(ON)

6.3

7.3

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

Zero Gate Voltage Drain Current

VDS = 48V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Dynamic

Total Gate Charge

VDS = 30V, ID = 30A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 30V, VGS = 0V,

f = 1.0MHz

Ciss

4382

Output Capacitance

Coss

668

Reverse Transfer Capacitance

Crss

339

Switching

Turn-On Delay Time

VGS = 10V, VDS = 30V,

RG = 3.3Ω, ID = 30A

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Drain-Source Diode Characteristics and Maximum Rating

Drain-Source Diode Forward

Voltage

VGS = 0V, IS = 20A

VSD

0.8

1.3

Reverse Recovery Time

IS = 30A, TJ = 25 ℃

dI/dt = 100A/us

tfr

Reverse Recovery Charge

Qfr

Notes:

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA

is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air

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