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Giải thích chi tiết về linh kiện  High Voltage NPN Transistor with Diode
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TSC5303D
High Voltage NPN Transistor with Diode
1/6
Version: C14
TO-251
(IPAK)
TO-252
(DPAK)
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
3A
VCE(SAT)
0.17V @ IC=1A, IB=0.25A
Features
●
Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
●
No Need to Interest an hFE Value Because of Low
Variable Storage-time Spread Even Though Comer
Spirit Product.
●
Low Base Drive Requirement
●
Suitable for Half Bridge Light Ballast Application
Block Diagram
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
●
Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
Package
Packing
TSC5303DCP ROG
TO-252
2.5kpcs / 13” Reel
TSC5303DCH C5G
TO-251
75pcs / Tube
Note: “G” denotes Halogen Free Products
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage @ VBE=0V
VCES
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
IC
3
A
Collector Peak Current (tp <5ms)
ICM
6
A
Base Current
IB
1.5
A
Base Peak Current (tp <5ms)
IBM
3
A
Power Total Dissipation @ TC=25ºC
PDTOT
30
W
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-55 to +150
oC
Pin Definition:
1. Base
2. Collector
3. Emitter


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