MMBD4448HT_15 datasheet(2/4 Pages) DIODES

2 / 4 page

MMBD4448HT /HTA /HTC /HTS

Document number: DS30263 Rev. 13 - 2

2 of 4

www.diodes.com

February 2011

MMBD4448HT /HTA /HTC /HTS

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

Forward Continuous Current (Note 5)

IFM

500

Average Rectified Output Current (Note 5)

250

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0s

IFSM

4.0

1.0

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

150

Thermal Resistance Junction to Ambient (Note 5)

RθJA

833

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

⎯

IR = 2.5μA

Forward Voltage

0.62

⎯

0.72

0.855

1.0

1.25

IF = 5.0mA

IF = 10mA

IF = 100mA

IF = 150mA

Leakage Current (Note 6)

⎯

100

μA

VR = 70V

VR = 75V, TJ = 150°C

VR = 25V, TJ = 150°C

VR = 20V

Total Capacitance

⎯

3.5

VR = 6V, f = 1.0MHz

Reverse Recovery Time

trr

⎯

4.0

VR = 6V, IF = 5mA

Notes:

5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

100

150

200

250

120

160

200

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve, Total Package (Note 5)

100

1,000

0.1

1.6

1.2

0.4

0.8

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics, Per Element

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