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LTC1155CS8 bảng dữ liệu(PDF) 11 Page - Linear Technology

tên linh kiện LTC1155CS8
Giải thích chi tiết về linh kiện  Dual High Side Micropower MOSFET Driver
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LTC1155CS8 bảng dữ liệu(HTML) 11 Page - Linear Technology

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11
LTC1155
S
APPLICATI
TYPICAL
Using the Second Channel for Fault Detection
Bootstrapped Gate Drive for (100Hz < FO < 10kHz)
5V/3A Extremely Low Voltage Drop Regulator with 10
µA Standby
Current and Short-Circuit Protection
Automotive High Side Driver with Reverse-Battery
and High Voltage Transient Protection
1155 TA08
1/2
LTC1155
GND
G1
DS1
VS
IN1
9V TO 16V
0.02
Ω
5%
10
µF
VALVE,
ETC.
MTP50N05E
*PROTECTS TTL/CMOS GATES DURING HIGH VOLTAGE
TRANSIENT OR REVERSE BATTERY
**NOT REQUIRED FOR INDUCTIVE OR RESISTIVE LOADS
5V
100k*
18V
1N4746A
18V
1N4746A
RDLY**
CDLY**
M
300
Ω
1/4W
+
1155 TA10
LTC1155
GND
G1
DS2
VS
IN1
4.5V TO 5.5V
0.05
Ω
10
µF
LOAD
SMD25N05-45L
NOTE:
DRAIN SENSE 2 IS USED TO DETECT A FAULT IN CHANNEL 1.
GATE 2 PULLS DOWN ON DRAIN SENSE 1 TO DISCHARGE
THE MOSFET AND REPORT THE FAULT TO THE
µP
*NOT REQUIRED FOR RESISTIVE OR INDUCTIVE LOADS
0.1
µF*
100k
µP OR
CONTROL
LOGIC
1N4148
1N4148
30k*
IN2
G2
DS1
FLT
ON/OFF
100k
+
1155 TA11
1/2
LTC1155
GND
G1
DS1
VS
IN1
9V TO 18V
0.01
Ω
IRFZ44
RISE AND FALL TIMES ARE
βETA TIMES FASTER
30k
µP OR
CMOS/TTL
LOGIC
2N2222
VGATE = 2VS – 0.6V
1N4148
0.01
µF
0.1
µF
LOAD
5V
18V
2N3906
1155 TA09
1/2
LTC1155
GND
G1
DS1
VS
IN1
5.2V TO 6V
0.02
Ω
10
µF
IRLR024
*CAPACITOR ESR SHOULD BE LESS THAN 0.5
Ω
300k
0.1
µF
ON/OFF
100k
0.1
µF
200pF
10k
1
3
4
5
6
7
8
LT1431
5V/3A
470
µF*
FAULT
+
+



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