MBRF20H150CT datasheet(2/7 Pages) VISHAY

2 / 7 page

MBR20H150CT, MBRF20H150CT, SB20H150CT-1

www.vishay.com

Vishay General Semiconductor

Revision: 13-Aug-13

Document Number: 88864

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Note

(1)

AEC-Q101 qualified



RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Derating Curve (Total)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward voltage

per diode

IF = 10 A

TC = 25 °C

VF (1)

0.90

IF = 10 A

TC = 125 °C

0.75

IF = 20 A

TC = 25 °C

0.99

IF = 20 A

TC = 125 °C

0.86

Maximum reverse current per diode



at working peak reverse voltage

TJ = 25 °C

IR (1)

5.0

μA

TJ = 125 °C

1.0

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

MBRB

UNIT

Typical thermal resistance per diode

RJC

2.2

4.2

2.2

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

MBR20H150CT-E3/45

2.06

50/tube

Tube

ITO-220AB

MBRF20H150CT-E3/45

2.20

50/tube

Tube

TO-262AA

SB20H150CT-1E3/45

1.58

50/tube

Tube

100

125

150

175

MBRF

MBR, MBRB

Case Temperature (°C)

100

120

140

160

180

200

220

240

260

100

J = TJ Max.

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

MBRF20H150CT bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

MBRF20H150CT bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL