F00087B datasheet(2/3 Pages) SSDI

2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00087B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF440J

Electrical Characteristics4/

Symbol

Min

Typ

Max Units

Drain to Source Breakdown Voltage

VGS = 0V, ID = 250 µA

BVDSS

500

570

––

Drain to Source On State Resistance

VGS = 10V, ID = 60% Rated ID

RDS(on)

––

0.65

0.86

Ω

On State Drain Current

VDS > ID(on) x RDS(on) Max, VGS = 10V

ID(on)

––

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(th)

2.0

3.2

4.0

Forward Transconductance

VDS ≥ 50V, ID = 60% Rated ID

gfs

4.9

––

S(Ʊ)

Zero Gate Voltage

Drain Current

VDS = max rated voltage, VGS = 0V

VDS = 80% Rated VDS, VGS = 0V, TA = 125

IDSS

––

0.015

250

μA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS

IGSS

––

100

-100

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10V

80% Rated VDS

ID = 8A

Qgs

Qgd

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VDD = 50%

Rated VDS

ID= 8 A

RG = 9.1Ω

RD = 30Ω

td(on)

td(off)

––

nsec

Diode Forward Voltage

IS = Rated ID, VGS = 0V, Tj = 25

VSD

––

0.85

1.2

Diode Reverse Recovery Time

Reverse Recovery Charge

Tj = 25

oC, I

F = Rated ID, di/dt = 100A/usec

trr

Qrr

210

900

7.7

970

8.9

nsec

μC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

Ciss

Coss

Crss

––

1450

180

––

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