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MBD4448HTW bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBD4448HTW bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() MBD4448HAQW/HADW/HCDW/HSDW/HTW - Fast switching speed - Surface device type mounting - Moisture sensitivity level 1 - High conductance power dissipation - For general purpose switching applications - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) - Case: SOT-363 small outline plastic package SYMBOL UNIT PD mW VRRM V VR V IF(AV) mA IO mA @ t = 1 μs @ t = 1 s RθJA oC/W TJ , TSTG oC SYMBOL UNIT Reverse Breakdown Voltage IR=100μAV(BR) V IF=5.0mA IF=10mA IF=100mA IF=150mA VR=70V nA VR=75V, TJ=150 oC μA VR=25V, TJ=150 oC μA VR=20V nA VR=6V, f=1MHz CJ pF IF=5mA, VR=6V trr ns Note 1: Device mounted on FR-4 PCB, 1 inch × 0.85 inch × 0.062 inch Note 2: Short duration test pulse uesd tu minimize self-heating effect Document Number: DS_S1501009 Version: C15 -55 to 150 4 1.5 Average Rectified Output Current Average Rectified Forward Current Reverse Voltage Junction and Storage Temperature Range Thermal Resistance (Junction to Ambient) Non-Repetitive Peak Forward Surge Current PARAMETER 200 80 57 500 250 625 MIN MAX 80 0.620 0.715 - 0.855 - 1.000 VF - - - - - V 1.250 100 VF 50 30 - Forward Voltage Reverse Leakage Current 25 -3.5 -4.0 Junction Capacitance Reverse Recovery Time IFSM A MECHANICAL DATA - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE Taiwan Semiconductor Small Signal Product Switching Diode FEATURES SOT-363 Repetitive Peak Reverse Voltage Power Dissipation |
Số phần tương tự - MBD4448HTW |
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Mô tả tương tự - MBD4448HTW |
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