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M6045P bảng dữ liệu(PDF) 1 Page - Vishay Siliconix

tên linh kiện M6045P
Giải thích chi tiết về linh kiện  Dual Common-Cathode Schottky Rectifier
PDF  6 Pages
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nhà sản xuất  VISHAY [Vishay Siliconix]
Trang chủ  http://www.vishay.com
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M6045P bảng dữ liệu(HTML) 1 Page - Vishay Siliconix

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M6035P thru M6060P
www.vishay.com
Vishay General Semiconductor
Revision: 21-Nov-12
1
Document Number: 88980
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode
power
supplies,
freewheeling
diodes,
DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
35 V, 45 V, 60 V
IFSM
350 A
VF at IF = 30 A
0.50 V, 0.56 V
TJ max.
150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M6035P
M6045P
M6060P
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
V
Maximum average forward rectified current at (Fig.1)
total device
IF(AV)
60
A
per diode
30
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
350
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode
IRRM
2.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C


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