| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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ES3F bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES3F bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page ![]() CREAT BY ART - Glass passivated chip junction - Ideal for automated placement - Super fast recovery time for high efficiency - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 50 100 150 200 300 400 500 600 V VRMS 35 70 105 140 210 280 350 420 V VDC 50 100 150 200 300 400 500 600 V IF(AV) A Trr ns Cj pF TJ OC TSTG OC Document Number: DS_D1405069 Version: I14 ES3A thru ES3J Taiwan Semiconductor Surface Mount Super Fast Rectifiers FEATURES - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ES 3C ES 3D MECHANICAL DATA Case: DO-214AB (SMC) DO-214AB (SMC) Polarity: Indicated by cathode band Weight: 0.21 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) ES 3F ES 3G ES 3J Unit Maximum repetitive peak reverse voltage Maximum RMS voltage PARAMETER SYMBOL ES 3A ES 3B Maximum DC blocking voltage Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Maximum instantaneous forward voltage (Note 1) IF= 3 A VF V Maximum reverse current @ rated VR TJ=25 ℃ TJ=100 ℃ IR 10 μA 500 - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Maximum reverse recovery time (Note 2) 35 Typical junction capacitance (Note 3) Typical thermal resistance RθJL RθJA 12 47 Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. ES 3H 0.95 1.3 1.7 45 30 OC/W Operating junction temperature range |
Số phần tương tự - ES3F |
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Mô tả tương tự - ES3F |
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