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BAS85 bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

tên linh kiện BAS85
Giải thích chi tiết về linh kiện  Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
PDF  3 Pages
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nhà sản xuất  TSC [Taiwan Semiconductor Company, Ltd]
Trang chủ  http://www.taiwansemi.com
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BAS85 bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Small Signal Product
CREAT BY ART
- Low forward voltage drop
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- Solder hot dip tin (Sn) lead finish
- Polarity: Indicated by black cathode band
SYMBOL
UNIT
PD
mW
VRRM
V
VR
V
IF(AV)
mA
IFSM
A
TJ
oC
TSTG
oC
SYMBOL
UNIT
Breakdown Voltage
BV
V
Reverse Leakage Current
IR
μA
Forward Voltage
Reverse Recovery Time
trr
ns
Junction Capacitance
CJ
pF
Document Number: DS_S1412007
Version: C14
Storage Temperature Range
PARAMETER
VALUE
BAS85
Taiwan Semiconductor
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
FEATURES
MINI MELF
4
125
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
200
Peak Forward Surge Current
Operating Junction Temperature
MIN
TYP
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
-65 to +125
30
30
200
30
2
0.24
V
0.32
0.40
0.50
IF=30mA
IF=100mA
(Note 1)
10
Note 1: Reverse recovery test conditions : IF=IR=10mA, RL=100Ω, IRR=1mA
0.80
5
MECHANICAL DATA
VR=1V,
f=1.0MHz
VF
PARAMETER
IR=10μA
VR=25V
IF=0.1mA
IF=1.0mA
IF=10mA
Average Forward Rectified Current


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