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AN1181 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện AN1181
Giải thích chi tiết về linh kiện  ELECTROSTATIC DISCHARGE SENSITIVITY MEASUREMENT
PDF  7 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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AN1181 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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ELECTROSTATIC DISCHARGE SENSITIVITY MEASUREMENT
Figure 1. Typical Equivalent HBM ESD Circuit
Notes:
– The performance of any simulator is influenced by its parasitic capacitance and inductance.
– Precautions must be taken in tester design to avoid recharge transients and multiple pulses.
– R2, used for Equipment Qualification as specified in Section 3.2 shall be a low induct-
ance, 1000 Volts, 500 resistor with ± 1% tolerance.
– Piggybacking of DUT sockets is permitted if waveform in socket is within spec limits.
– Reversal of terminals A and B to achieve dual polarity is not permitted.
– S2 should be closed 10 to 100 milliseconds after the pulse delivery period to ensure the DUT
socket is not left in charge state. S2 should be opened at least 10 milliseconds prior to the
delivery of the next pulse.
High Voltage
Pulse
Generator
R 2
R 1
C1
100 pF
S2
S1
DUT
socket
Terminal B
Terminal A
1500 ohm
500 ohm
short



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