AN4544 datasheet(27/35 Pages) STMICROELECTRONICS

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DocID026535 Rev 1

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AN4544

Datasheet explanation

2.7.1

Turn-on delay time (td(on))

It is defined as the time from VGE = 10% to IC = 10% of its final value. During this time the

MOSFET channel is formed.

2.7.2

Current rise time (tr)

It is the time of IC to increase from 10% to 90% of its final value. The rise time is influenced

by the IGBT gate characteristics.

2.7.3

Turn-on current (di/dt(on)) and voltage slope (dv/dt(on))

It is the rate of rise of current (di/dt) and voltage (dv/dt) during turn-on. Both of slopes can be

controlled by changing the gate resistance. In particular switching transients are reduced as

the gate resistance increases.

2.7.4

Turn-off delay time (td(off))

It is defined as the time from VGE = 90% of its initial value to IC = 90% of its initial value.

During this time the MOSFET channel is removed and further supply of electrons from the

emitter is cut.

2.7.5

Fall time (tf)

it defined as the time between IC = 90% to 10% of its initial value. The fall time also includes

the tail period which stands for the time taken to recombine excess charges stored in N-

region. A high current tail introduces high switching losses and limits the operating

frequency of the device.

2.7.6

Switching energy (Eon) and (Eoff)

The switching time is not sufficient to calculate the switching loss, as there is a region where

some switching losses occur although they are not specifically included in the switching

time.

Figure 23. Switching times vs. collector current

Figure 24. Switching times vs. gate resistance

t(ns)

IC(A)

VCC=400V,

Tj=175°C,

VGE=15V

Rg=10Ω

tdoff

tdon

100

AM17403v1

t(ns)

Rg(Ω)

VCC=400V

Tj=175°C

VGE=15V

IC=40A

tdoff

tdon

100

1000

AM17404v1

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